Impact of RTN and NBTI on Synchronous Circuit Reliability
نویسندگان
چکیده
We investigate a synchronous circuit reliability for 65nm−40nm CMOS technology. The impact of Random telegraph noise (RTN) and Negative Bias Temperature Instability (NBTI) on a circuit is evaluated. We found two things. (i) RTN at one or a few stages of a combinational circuit induces a large delay fluctuation under low voltage operation. (ii) LSI lifetime can be extended by utilizing NBTI recovery.
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Article history: Received 12 November 2010 Received in revised form 14 December 2010 Accepted 28 December 2010 Available online 17 January 2011 0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.12.015 ⇑ Corresponding author. Tel.: +1 407 8235719; fax: E-mail address: [email protected] (J.-S. Yuan). Negative-bias temperature instability (NBTI) on high-k metal-gate Si...
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